Photovoltaic properties of ZnO/p-Si heterostructure with graphene transparent electrodes

Author

Yilin Sun ; Dan Xie ; Jianlong Xu ; Gang Li ; Cheng Zhang ; Xiaowen Zhang ; Yuanfan Zhao ; Tingting Feng ; Tianling Ren

Author_Institution

Tsinghua Nat. Lab. for Inf. Sci. & Technol-ogy (TNList), Tsinghua Univ., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

We report the photovoltaic properties of ZnO/p-Si heterostructure with graphene as transparent electrodes. The graphene films with good transparency and conductivity were transferred to the substrate as the transparent conductive electrode (TCE) after deposition of 30 nm thick ZnO film on p-Si wafers by a simple sol-gel method. The graphene/ZnO/p-Si heterostructure exhibits good light sensitivity to both sunlight and UV light, demonstrating the feasibility of graphene used as TCE in ZnO based optoelectronic devices.

Keywords

II-VI semiconductors; elemental semiconductors; graphene; p-n heterojunctions; photoconductivity; photovoltaic effects; semiconductor thin films; semiconductor-insulator boundaries; silicon; sol-gel processing; wide band gap semiconductors; zinc compounds; C-ZnO-Si; Si; UV light; ZnO based optoelectronic devices; graphene films; graphene transparent conductive electrode; graphene-ZnO-p-Si heterostructure; light sensitivity; p-Si wafers; photovoltaic properties; size 30 nm; sol-gel method; sunlight; Abstracts; Graphene; Integrated optics; Photovoltaic systems; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021275

Filename

7021275