Title :
P-n channel junctionless transistor
Author :
Hui Yang ; YuFeng Guo ; Yang Hong ; Jiafei Yao ; Jun Zhang ; Xincun Ji
Author_Institution :
Nanjing Univ. of Posts & Telecommun., Nanjing, China
Abstract :
We propose a double gate junctionless transistor with P-type and N-type doping in vertical direct ion but laterally uniform doping in the channel that we call the P-N channel double gate junctionless transistor (PN-DG-JLT). The characteristics of PN-DG-JLT were compared with N-channel double gate junctionless transistor using 2-D numerical simulation. The PN-DG-JLT exhibits a favorable subthreshold leakage current and ON to OFF current ratio by controlling doping concentration of channel.
Keywords :
field effect transistors; semiconductor doping; 2D numerical simulation; N-channel double gate junctionless transistor; N-type doping; ON to OFF current ratio; P-type doping; PN-DG-JLT; channel doping concentration; laterally uniform doping; p-n channel junctionless transistor; subthreshold leakage current; vertical direct ion; Abstracts; Semiconductor process modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021278
