• DocumentCode
    2417167
  • Title

    Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers

  • Author

    Egard, Mikael ; Ohlsson, Lars ; Borg, B. Mattias ; Wernersson, Lars-Erik ; Lind, Erik

  • Author_Institution
    Solid State Phys., Lund Univ., Lund, Sweden
  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-κ gate oxides.
  • Keywords
    III-V semiconductors; MOSFET; gallium arsenide; indium compounds; semiconductor growth; Ill-V technology; In0.53Ga0.47As; digital logic application; drain contact layer; electronic property; high-κ gate oxide integration; selectively regrown source; self aligned lll-V device architecture; self-aligned gate-last surface channel MOSFET; Gold; Indium phosphide; Logic gates; MOSFET circuits; Resistance; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.6086641
  • Filename
    6086641
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2417167