Title :
Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers
Author :
Egard, Mikael ; Ohlsson, Lars ; Borg, B. Mattias ; Wernersson, Lars-Erik ; Lind, Erik
Author_Institution :
Solid State Phys., Lund Univ., Lund, Sweden
Abstract :
III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-κ gate oxides.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; semiconductor growth; Ill-V technology; In0.53Ga0.47As; digital logic application; drain contact layer; electronic property; high-κ gate oxide integration; selectively regrown source; self aligned lll-V device architecture; self-aligned gate-last surface channel MOSFET; Gold; Indium phosphide; Logic gates; MOSFET circuits; Resistance; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.6086641
