Low-threshold room-temperature lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars

In this work, we present a method whereby the photonic band gap region and active gain regions are formed simultaneously by selective-area metal-organic chemical vapor deposition. This approach allows us the ability to design device parameters lithographically. By accurate control of position and diameter of the NPs, high-g cavities can be formed entirely with NPs. This particular model cavity supports a non-degenerate hexapole mode with a high overlap between the E-field and the center pillars. Design optimization by finite-difference time-domain simulations yields a cavity Q of-5000.