DocumentCode
241724
Title
Impact of BTI on random logic circuit critical timing
Author
Cheung, K.P. ; Lu, J.W. ; Jiao, G.F. ; Vaz, C. ; Campbell, J.P. ; Ryan, J.T.
Author_Institution
Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
4
Abstract
Using a newly developed single transistor eye-diagram method, we examined the effect of BTI stress on logic circuit critical timing under a realistic bit pattern (pseudo random). We demonstrated that the recoverable part of the BTI degradation produce significant timing skew that is random in nature. This random timing skew is in addition to the systematic timing degradation captured in measurements using ring oscillator circuits. The size of this random skew is very large and can be a serious problem for logic circuit under tight timing budget. This effect has not been known before and therefore not accounted for in any of the proposed circuit methodology to mitigate BTI effects.
Keywords
logic circuits; oscillators; rings (structures); timing circuits; transistors; BTl degradation; BTl effect mitigation; BTl stress; bias temperature instability; bit pattern; pseudo random; random logic circuit critical timing skew; ring oscillator circuit methodology; single transistor eye-diagram method; systematic timing degradation; Capacitance; Generators; Probes; Radio frequency; Stress; Stress measurement; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021286
Filename
7021286
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