Title :
III-nitride tunnel diodes with record forward tunnel current density
Author :
Krishnamoorthy, Sriram ; Park, Pil Sung ; Rajan, Siddharth
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
We report on the design, fabrication, and characterization of the first interband tunnel junctions showing forward tunneling characteristics in the Ill-Nitride system. We have achieved record forward tunneling currents (>;100 mA/cm" at 10 mV, and >; 10 A/cm" peak current) using polarization engineered GaN/InGaN/GaN heterojunction diodes. We also report for the first time, negative differential resistance in interband Ill-Nitride tunnel junctions, with peak-valley current ratio (PVCR) of up to 5 at room temperature, and 147 at low temperature.
Keywords :
tunnel diodes; differential resistance; forward tunneling characteristics; heterojunction diodes; interband tunnel junctions; nitride tunnel diodes; peak-valley current ratio; record forward tunnel current density; record forward tunneling current; Current density; Gallium nitride; Junctions; Resistance; Silicon; Tunneling;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.6086644
