Effects of bias on the radiation responses of Si-based TFETs

Author

Lili Ding ; Gnani, Elena ; Gerardin, Simone ; Bagatin, Marta ; Le Royer, Cyrille ; Paccagnella, Alessandro

Author_Institution

Dept. of Inf. Eng., Univ. of Padova, Padua, Italy

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

The paper reports the radiation response of TFETs due to the gate oxide and BOX separately, by means of the introduction of three setups of bias during irradiation. The dependency of shift of the threshold voltage due to the interface traps and shifts of the characteristics on bias during irradiation is investigated. Due to the particular doping structures of TFETs, the holes trapping in BOX is mainly induced under the P+ source region rather under the channel, which is inclined to induce the increase of the threshold voltage and the voltage at which band-to-band tunneling occurs. Under this circumstance, the degradation under unbiased case is even worse than under ON biased situation.

Keywords

elemental semiconductors; field effect transistors; radiation hardening (electronics); semiconductor device testing; semiconductor doping; silicon; tunnel transistors; BOX; P+ source region; Si; TFET; band-to-band tunneling; buried oxide; doping structures; gate oxide; interface traps; radiation responses; threshold voltage; Abstracts; Radiation effects; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021289

Filename

7021289