Title :
Key factors affecting trigger voltage of SCRS for ESD protection
Author :
Hailian Liang ; Long Huang ; Xiaofeng Gu ; Huafeng Cao ; Shurong Dong ; Liou, Juin J.
Author_Institution :
Dept. of Electron. Eng., Jiangnan Univ., Wuxi, China
Abstract :
A lateral silicon-controlled rectifier (SCR), a modified vertical SCR and a modified lateral SCR with the same device width are fabricated in a 0.25-μm Bipolar-CMOS-DMOS high-voltage process. Key factors affecting the trigger voltage of SCRs are investigated by simulation and transmission line pulse tests. The simulation results show that the trigger voltage depends on the doping concentration, the space charge width and the vertical depth of the breakdown junction. The experimental results indicate that the trigger voltage can be decreased from 40 V to 15 V when the space charge width and the vertical depth of breakdown junction decrease appropriately.
Keywords :
CMOS integrated circuits; bipolar integrated circuits; electrostatic discharge; integrated circuit testing; semiconductor doping; space charge; thyristors; trigger circuits; ESD protection; bipolar-CMOS-DMOS high-voltage process; breakdown junction; doping concentration; electrostatic discharge; modified lateral SCR; modified vertical SCR; silicon-controlled rectifier; size 0.25 mum; space charge width; transmission line pulse testing; trigger voltage; voltage 40 V to 15 V; Abstracts; Electrostatic discharges; Junctions; Phase change materials; Physics; Thyristors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021290
