Single event transients in PDSOI CMOS inverter chain irradiated by pulsed laser

Author

Xing Zhao ; Bo Mei ; Jinshun Bi ; Zhongshan Zheng ; Linchun Gao ; Chuanbin Zeng ; Jiajun Luo ; Fang Yu ; Zhengsheng Han

Author_Institution

Inst. of Microelectron., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Single event transient (SET) issues become a primary concern in modern CMOS logic circuits. The possibility of soft errors due to the propagation of SETs is increasing, and becomes a significant reliability challenge. In this paper, single event transients in a 100 series 0.18 μm partially-depleted Silicon-On-Insulator (PDSOI) CMOS inverter chain are studied by pulsed laser. Through experiment, the propagation-induced pulse broadening (PIPB) effect is observed. PIPB is mainly caused by float-body-induced threshold voltage hysteresis in PDSOI transistors. And, it is found that SET pulses don´t reach rail-to-rail swings, because of voltage dividing between internal resistance of oscilloscope and on resistance of PMOSFET.

Keywords

CMOS logic circuits; MOSFET circuits; integrated circuit testing; laser materials processing; logic gates; oscilloscopes; radiation hardening (electronics); silicon-on-insulator; CMOS logic circuits; PDSOI CMOS inverter chain; PDSOI transistors; PIPB effect; PMOSFET; SET pulses; Si; float-body-induced threshold voltage hysteresis; internal resistance; oscilloscope; partially-depleted silicon-on-insulator; propagation-induced pulse broadening effect; pulsed laser; rail-to-rail swings; single event transients; size 0.18 mum; soft errors; Abstracts; Lasers; MOSFET circuits; Partial discharges; Photonics; Transient analysis; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021292

Filename

7021292