Title :
Nonlinear circuit optimization with dynamically integrated physical and device models
Author :
Bandler, J.W. ; Zhang, Q.J. ; Cai, Q.
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
Abstract :
The approach used, which is directed at the next-generation tools for yield optimization, dynamically integrates physics-based device models. The FET model of M.A. Khatibzadeh and R.J. Trew (IEEE Trans. Microwave Theory Tech., vol.36, p.231-8, 1988) is treated in a novel formulation of harmonic balance simulation. Adjoint sensitivity analysis allows efficient optimization of parameters such as device dimensions, material-related parameters, doping profile, channel thickness, etc. Parameter extraction extraction and power amplifier design are demonstrated.<>
Keywords :
circuit CAD; field effect integrated circuits; field effect transistors; integrated circuit technology; semiconductor device models; sensitivity analysis; FET model; channel thickness; device dimensions; doping profile; harmonic balance simulation; material-related parameters; next-generation tools; nonlinear circuit optimisation; optimization of parameters; parameter extraction; physics-based device models; power amplifier design; sensitivity analysis; yield optimization; Circuit simulation; Doping profiles; Integrated circuit yield; Microwave FETs; Microwave devices; Microwave theory and techniques; Nonlinear circuits; Parameter extraction; Semiconductor process modeling; Sensitivity analysis;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99580
