Highly linear X-band GaN-based low-noise amplifier

Author

Andrei, Cristina ; Doerner, Ralf ; Bengtsson, Olof ; Chevtchenko, Serguei A. ; Heinrich, Wolfgang ; Rudolph, Matthias

Author_Institution

Ulrich L. Rohde Chair of RF & Microwave Tech., Brandenburg Univ. of Technol., Cottbus, Germany

fYear

2012

fDate

3-5 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents a highly linear X-Band low-noise amplifier. The LNA is realized in coplanar technology using the 0.25 μm GaN-HEMT MMIC process from FBH. A noise figure below 2.5 dB is measured from 7 GHz to 12 GHz together with very good input and output matching. This LNA provides a OIP3 of 28 dBm at 8 GHz, which is 8 dB above the 1 dB compression point.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; field effect analogue integrated circuits; gallium compounds; low noise amplifiers; wide band gap semiconductors; FBH; GaN; HEMT MMIC process; OIP3; coplanar technology; frequency 7 GHz to 12 GHz; highly linear X-band low-noise amplifier; input matching; monolithic microwave integrated circuit; output matching; size 0.25 mum; Gallium nitride; HEMTs; MMICs; MODFETs; Noise; Noise figure; Amplifier noise; microwave field-effect transistor (FET) amplifiers; monolithic microwave integrated circuit (MMIC) amplifiers; noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on

Conference_Location

Potsdam

ISSN

2161-0819

Print_ISBN

978-1-4673-4454-8

Electronic_ISBN

2161-0819

Type

conf

DOI

10.1109/ISSSE.2012.6374314

Filename

6374314