Title :
Highly linear X-band GaN-based low-noise amplifier
Author :
Andrei, Cristina ; Doerner, Ralf ; Bengtsson, Olof ; Chevtchenko, Serguei A. ; Heinrich, Wolfgang ; Rudolph, Matthias
Author_Institution :
Ulrich L. Rohde Chair of RF & Microwave Tech., Brandenburg Univ. of Technol., Cottbus, Germany
Abstract :
This paper presents a highly linear X-Band low-noise amplifier. The LNA is realized in coplanar technology using the 0.25 μm GaN-HEMT MMIC process from FBH. A noise figure below 2.5 dB is measured from 7 GHz to 12 GHz together with very good input and output matching. This LNA provides a OIP3 of 28 dBm at 8 GHz, which is 8 dB above the 1 dB compression point.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; field effect analogue integrated circuits; gallium compounds; low noise amplifiers; wide band gap semiconductors; FBH; GaN; HEMT MMIC process; OIP3; coplanar technology; frequency 7 GHz to 12 GHz; highly linear X-band low-noise amplifier; input matching; monolithic microwave integrated circuit; output matching; size 0.25 mum; Gallium nitride; HEMTs; MMICs; MODFETs; Noise; Noise figure; Amplifier noise; microwave field-effect transistor (FET) amplifiers; monolithic microwave integrated circuit (MMIC) amplifiers; noise;
Conference_Titel :
Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on
Conference_Location :
Potsdam
Print_ISBN :
978-1-4673-4454-8
Electronic_ISBN :
2161-0819
DOI :
10.1109/ISSSE.2012.6374314
