Impact of group delay on tunable impedance matching networks based on Barium-Strontium-Titanate varactors

Author

González-Rodríguez, Erick ; Maune, Holger ; Zheng, Yuliang ; Shen, Lufei ; Shah, Ibrahim Asghar ; Hofmann, Klaus ; Dahlhaus, Dirk ; Jakoby, Rolf

Author_Institution

Inst. for Microwave Eng. & Photonics, Tech. Univ. Darmstadt, Darmstadt, Germany

fYear

2012

fDate

3-5 Oct. 2012

Firstpage

1

Lastpage

5

Abstract

In this paper the bit error rate (BER) performance of a tunable impedance matching network (TMN) is shown using a QAM digital modulation scheme over an AWGN channel. The characterized TMN is based on Barium-Strontium-Titanate (BST) ferroelectric thick-film varactors with a maximum DC tuning voltage of 90V. Inherent dispersive behavior is subsumed in the forward transmission of the passive components. Due to this nonlinear phase response, in general to maximize the overall system performance, an agile selection of the varactor values is demonstrated, taking into account the phase and group delay. Detailed simulation results of a testbed are presented and the influence of different matched impedances on the tuning behavior is discussed at a center frequency of 1.9 GHz.

Keywords

AWGN channels; delays; error statistics; ferroelectric capacitors; impedance matching; quadrature amplitude modulation; thin film capacitors; varactors; AWGN channel; QAM digital modulation; barium-strontium-titanate varactors; bit error rate; ferroelectric thick-film varactors; frequency 1.9 GHz; group delay; tunable impedance matching networks; Bit error rate; Delay; Impedance matching; Radio frequency; Receivers; Signal to noise ratio; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on

Conference_Location

Potsdam

ISSN

2161-0819

Print_ISBN

978-1-4673-4454-8

Electronic_ISBN

2161-0819

Type

conf

DOI

10.1109/ISSSE.2012.6374317

Filename

6374317