Title :
Comparison of GaAs MESFET DC models
Author :
Hu, Z.R. ; McKeown, J.J. ; Brazil, T. ; Stewart, J.A.C.
Author_Institution :
Queen´´s Univ. of Belfast, UK
Abstract :
A comparative study of ten GaAs MESFET DC models, including three variations, is described. The computations have been carried out using an interactive program for nonlinear parameter extraction and sensitivity analysis (INTERSECT). The study concluded that W.R. Curtice´s cubic model (1985), with seven parameters, provides the best fit to the two sets of MESFET DC characteristics used.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; gallium arsenide; semiconductor device models; sensitivity analysis; GaAs; GaAs MESFET DC models; INTERSECT; MESFET DC characteristics; computations; cubic model; interactive program; nonlinear parameter extraction; semiconductors; sensitivity analysis; seven parameters; Curve fitting; Differential equations; Educational institutions; Gallium arsenide; Jacobian matrices; MESFET circuits; Nonlinear equations; Parameter extraction; Sensitivity analysis; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99582
