Title : 
Gating circuit developed for high power thyristors
         
        
            Author : 
Seki, N. ; Tsuruta, Y. ; Ichikawa, K.
         
        
            Author_Institution : 
Toshiba Corporation, Puchu Works, Tokyo, Japan
         
        
        
            fDate : 
June 29 1981-July 3 1981
         
        
        
        
            Abstract : 
Gate turn off thyristor (GTO) gating circuits, especially off-gating circuits, are the most important for reliable operation of GTO equipment. This paper describes a new gating circuit for high power GTO of 600A class. The off-gating circuit can provide a negative pulse of 200A with its rate of rise of 30A/us. Its power dissipation decreases to 20 percent of a previous type. The on-gating and negative bias circuits are also described.
         
        
            Keywords : 
Breakdown voltage; Logic gates; Power dissipation; Resistance; Switching circuits; Thyristors; Transistors;
         
        
        
        
            Conference_Titel : 
Power Electronics Specialists Conference, 1981 IEEE
         
        
            Conference_Location : 
Boulder, Colorado, USA
         
        
        
        
            DOI : 
10.1109/PESC.1981.7083642