DocumentCode :
241781
Title :
POD-based thermal model for FinFET IC structure
Author :
Cheng, Ming-C ; Wangkun Jia ; Helenbrook, Brian T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
4
Abstract :
A reduced basis element method is presented based on proper orthogonal decomposition (POD) to develop thermal models for FinFET devices and integrated circuits. The POD approach is able to substantially reduce numerical degrees of freedom (DOF) while offering spatial thermal solution as detailed as detailed numerical simulation. The POD thermal models for the selected FinFET blocks can be stored in a library for constructing a larger circuit structure. This study demonstrates that, using the developed approach, an accurate thermal model for a multi-block FinFET structure can be developed to capture all the hot spots in the structure with a reduction in DOFs by nearly 6 orders of magnitude, compared to DNS.
Keywords :
MOSFET circuits; integrated circuit modelling; numerical analysis; FinFET devices; degrees of freedom; integrated circuits; numerical simulation; proper orthogonal decomposition; thermal model; Abstracts; Integrated circuit modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021313
Filename :
7021313
Link To Document :
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