DocumentCode
2417862
Title
Application of transistor emitter-open turn-off scheme to high voltage power inverters
Author
Chen, Dan Y. ; Walden, John P.
Author_Institution
Department of Electrical Engineering Virginia Polytechnic Institute, Blacksbburg, VA
fYear
1981
fDate
June 29 1981-July 3 1981
Firstpage
252
Lastpage
257
Abstract
Transistor emitter-open turn-off scheme has been implemented in an experimental operating high voltage power inverter. Using such a turn-off scheme, not only the transistor turn-off speed greatly increased but also the reverse-biased second breakdown phenomenon is eliminated. Therefore, the very same device can be fully utilized for higher voltage and higher frequency applications.
Keywords
Breakdown voltage; Electric breakdown; Inverters; Low voltage; Power transistors; Transistors; Windings;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1981 IEEE
Conference_Location
Boulder, Colorado, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1981.7083646
Filename
7083646
Link To Document