Title :
SEU-hardened SRAM cell
Author :
Shunchuang Li ; Hong Zhang ; Jiangyi Shi ; Peijun Ma
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´an, China
Abstract :
An SEU-hardened SRAM cell is proposed in this paper. The cell aims at improving the stability and enhancing the SEU immunity in comparison with the earlier proposals. SPICE based simulation verified that the proposed cell have the merits of stability and area efficient. The hardness is achieved by adding redundant nodes and validated using mixed-mode simulation.
Keywords :
SRAM chips; circuit stability; integrated circuit reliability; radiation hardening (electronics); SEU hardened SRAM cell; SEU immunity; SPICE; circuit stability; mixed mode simulation; redundant nodes; single event upset; Abstracts; Delays; Educational institutions; SRAM cells;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021322
