Title :
High-k/metal gate system and related issues
Author_Institution :
Center for Innovative Integrated Electron. Syst., Tohoku Univ., Sendai, Japan
Abstract :
Key factors on Hf-based high-k/metal gate (HK/MG) CMOS technology based on conventional gate first process for low operational power application are overviewed. WF tuning derived from ionic property of HK material, process cost, EOT scaling under defect free interface as well as low gate leakage current are issues to be overcome. The most important item is how to control the atomic distribution in the Hf-based HK/MG system, which is requisite for the importunate WF tuning and EOT scaling.
Keywords :
CMOS integrated circuits; circuit tuning; hafnium; high-k dielectric thin films; leakage currents; low-power electronics; EOT scaling; HK material; HK-MG CMOS technology; Hf; WF tuning; atomic distribution; defect free interface; gate first process; high-k-metal gate system; ionic property; low gate leakage current; low operational power application; process cost; Abstracts; Electrodes; Hafnium oxide; Logic gates; MOS devices; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021328
