Title :
Characteristics of Lanthanum Aluminate multi-stacked films by ALD at various temperatures
Author :
Richardson, Milton T. ; Liu Hongxia
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´an, China
Abstract :
Amorphous Lanthanum Aluminate (LaAlO3) was deposited on p-type Si (100) substrates by atomic layer deposition (ALD) at various temperatures. The precursors were Tris (isopropyl-cyclopentadienyl) lanthanum [La(iPrCp)3], trimethylaluminium (TMA) [(CH3)3Al] and water (H2O). The deposition was self-limiting and a favorable temperature window was found to be between 300 and 320 °C. Capacitance-voltage measurements on the LaAlO3/SiO2/Si stacks showed no humps and hysteresis was negligible. An average EOT = 3 nm and k ~ 13 were realized. The interfacial layer was negligible, hence no detectable amount of SiO2 was measured when X-ray photoelectron spectroscopy (XPS) analysis was done. LaAlO3 films deposited within this temperature window make it suitable alternative gate dielectrics for the replacement of SiO2.
Keywords :
X-ray photoelectron spectra; amorphous state; atomic layer deposition; capacitance; dielectric thin films; electrical conductivity; lanthanum compounds; multilayers; semiconductor-insulator boundaries; silicon compounds; ALD; LaAlO3-SiO2-Si; Si; X-ray photoelectron spectroscopy; XPS; amorphous lanthanum aluminate multistacked films; atomic layer deposition; capacitance-voltage measurements; gate dielectrics; interfacial layer; p-type Si(100) substrates; temperature 300 degC to 320 degC; trimethylaluminium; tris(isopropyl-cyclopentadienyl) lanthanum; Abstracts; Capacitance-voltage characteristics; Educational institutions; Engines; Films; High K dielectric materials; Lanthanum;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021331
