Atomic layer deposition of high-quality HFO2 film on graphene using low energy electron beam pretreatment

We present a new pretreatment technique for deposition of uniform, pinhole-free and ultra-thin (≤5nm) high-k dielectric in any desired location on graphene. The key point of our technique is to pre-deposit a 1-nm seed layer for ALD of HfO₂ by using low energy electron beam scan on graphene, which may not deteriorate the electrical properties of graphene. This work open a new route to fabricate the high-quality high-k dielectric for building graphene-based devices.