Title :
A design technique for MESFET mixers based on SPICE program
Author :
Joao Rosario, M. ; Costa Freire, J.
Author_Institution :
Electrotecnica e Computadores-IST, Lisboa, Portugal
Abstract :
A design technique for MESFET mixers is described. This technique is based on a mixer analysis program (MIXAN) developed to obtain the value of conversion gain and optimum source and load impedances for any local oscillator power and DC bias. The MIXAN program uses SPICE as a subroutine to determine large-signal current and voltage waveforms. By using MIXAN, it is possible to obtain the operating conditions for maximum conversion gain. The good agreement between experimental and theoretical values for X-band drain and gate mixers proves the validity of the design technique.<>
Keywords :
Schottky gate field effect transistors; circuit CAD; mixers (circuits); solid-state microwave circuits; DC bias; MESFET mixers; MIXAN; SPICE; X-band; conversion gain; large-signal current; large-signal voltage; load impedances; local oscillator power; maximum conversion gain; mixer analysis program; source impedances; voltage waveforms; Impedance; Light emitting diodes; Local oscillators; MESFET circuits; Parasitic capacitance; Radio frequency; SPICE; Topology; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99587
