A superjunction insulated Gate Bipolar Transistor with bilateral HK insulators: A solution to charge imbalance

Author

Hang Wei ; Jiang, Frank X. C. ; Xinnan Lin

Author_Institution

Shenzhen Grad. Sch., Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

A superjunction (SJ) IGBT(Insulated Gate Bipolar Transistor) with bilateral HK (high permittivity) insulators(BHK-SJ-IGBT) is proposed. In the OFF-state, the n/p pillars are not only depleted by each other, but also by the bilateral HK capacitors adaptively. Thus the drift region can be fully depleted whether or not there is charge imbalance. The effect is verified by Sentaurus TCAD. The results show that the BV of the proposed device has strong immunity to charge imbalance. In addition, the BHK-SJ-IGBT achieves better trade-off relationship between the blocking voltage(BV) and the specific on- resistance(Ron,sp) than the conventional SJ IGBT(C-SJ-IGBT).

Keywords

capacitors; insulated gate bipolar transistors; insulators; technology CAD (electronics); BHK-SJ-IGBT; BV; OFF-state; bilateral HK capacitors; bilateral HK insulator; blocking voltage; charge imbalance solution; drift region; n-p pillars; sentaurus TCAD; specific on-resistance; superjunction insulated gate bipolar transistor; trade-off relationship; Insulated gate bipolar transistors; Insulators; Laboratories; Logic gates; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021335

Filename

7021335