DocumentCode :
241827
Title :
Single-layer graphene field-effect transistors with ferroelectric PZT gate
Author :
Xiaowen Zhang ; Dan Xie ; Jianlong Xu ; Haiming Zhao ; Cheng Zhang ; Yilin Sun ; Yuanfan Zhao ; Tingting Feng ; Gang Li ; Tianling Ren
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol. (TNList), Tsinghua Univ., Beijing, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
Single-layer graphene (SLG) was transferred onto lead-zirconate-titanate (PZT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The SLG FETs with PZT gate exhibited p-type characteristics with a large memory window of about 5.65V and an on/off current ratio of about 4.7 when Vgmax was 6V. The ferroelectric gate graphene field-effect transistors (Fe-GFETs) exhibit enhanced stability through a bi-stable current state operation with long retention time. The trapping/de-trapping of charge carriers in the interface states and the polarization screening from water molecules located between graphene and PZT are proposed to be responsible for the anti-hysteresis behaviors of the Fe-GFETs.
Keywords :
ferroelectric materials; field effect transistors; graphene devices; iron; lead compounds; semiconductor device testing; Fe-C; H2O; PZT substrate; Pb[ZrxTi1-x]O3; SLG FET; antihysteresis behaviors; charge carriers; detrapping; ferroelectric PZT gate; ferroelectric gate; field effect transistors; lead-zirconate-titanate substrate; polarization screening; single-layer graphene; transport properties; voltage 6 V; water molecules; Abstracts; Integrated optics; Lead; Logic gates; Optical films; Optical polarization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021336
Filename :
7021336
Link To Document :
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