DocumentCode
2418577
Title
Three-dimensional Electrochemical Micromachining on Metal and Semiconductor by Confined Etchant Layer Technique (CELT)
Author
Tang, Jing ; Zhang, Li ; Jiang, Li M. ; Xie, Lei ; Zu, Y.B. ; Tian, Zhao W.
Author_Institution
Coll. of Chem. & Chem. Eng., Xiamen Univ.
fYear
2007
fDate
16-19 Jan. 2007
Firstpage
328
Lastpage
332
Abstract
The authors developed a technology for three dimensional (3D) electrochemical micromachining. The confined etchant layer technique (CELT) has been applied to achieve effective three-dimensional (3D) micromachining on different kinds of metals and semiconductors. This technique operates on the basis of indirect electrochemical process, and is a low-cost technique for microfabrication of arbitrary 3D structures in a single step.
Keywords
electrochemical machining; metals; nanotechnology; semiconductors; 3D electrochemical micromachining; arbitrary 3D structures; confined etchant layer technique; metal; microfabrication; semiconductor; Chemistry; Electrochemical processes; Etching; Gallium arsenide; Lithography; Metal-insulator structures; Micromachining; Microstructure; Substrates; Systems engineering and theory;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
Conference_Location
Bangkok
Print_ISBN
1-4244-0610-2
Type
conf
DOI
10.1109/NEMS.2007.351975
Filename
4160331
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