DocumentCode :
2418624
Title :
High performance full adder cell: A comparative analysis
Author :
Sharma, Tripti ; Sharma, K.G. ; Singh, B.P.
Author_Institution :
Dept. of Electron. & Commun. Eng., FET-MITS, Lakshmangarh, India
fYear :
2010
fDate :
3-4 April 2010
Firstpage :
156
Lastpage :
160
Abstract :
Full adder is an essential component for the design and development of all types of processors viz. digital signal processors (DSP), microprocessors etc. Adders are the core element of complex arithmetic operations like addition, multiplication, division, exponentiation etc. In most of these systems adder lies in the critical path that affects the overall speed of the system. So enhancing the performance of the 1-bit full adder cell is a significant goal. The present study proposes an energy efficient full adder cell with least MOS transistor count that reduces the serious problem of threshold loss. It considerably increases the speed. Result shows 45% improvement in threshold loss problem, 40% improvement in power-delay product over the other types of adders with comparable performance. The simulation has been carried out on Tanner EDA tool on BSIM3v3 90nm and 130nm technologies.
Keywords :
MOSFET; adders; digital arithmetic; 1-bit full adder cell; Tanner EDA tool; complex arithmetic operation; energy efficiency; high performance full adder cell; least MOS transistor count; power-delay product; threshold loss; Adders; Arithmetic; Digital signal processing; Digital signal processors; Energy efficiency; MOSFETs; Microprocessors; Performance analysis; Performance loss; Signal design; Arithmetic operations; Full adder; PDP; VLSI; low power;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Students' Technology Symposium (TechSym), 2010 IEEE
Conference_Location :
Kharagpur
Print_ISBN :
978-1-4244-5975-9
Electronic_ISBN :
978-1-4244-5974-2
Type :
conf
DOI :
10.1109/TECHSYM.2010.5469170
Filename :
5469170
Link To Document :
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