In-situ doped and laser annealing of PECVD SiC thin film

In this paper, in order to improve PECVD SiC´s electronics performance, in-situ doped together with laser annealing technology was put forward. NH3 was introduced as source of N in-situ doping, and laser annealing was done after deposition. Laser annealing can change the amorphous in-situ doped PECVD SiC to poly crystal, the size of crystal was growing with laser energy density, meanwhile it increasing activity and mobility of carriers, which enhance the conductivity of SiC film. Therefore, PECVD SiC film can not only be applied as structure material in MEMS devices, but also compatibles with post CMOS process.