DocumentCode
2418877
Title
High power density IGBT module for high reliability applications
Author
Chamund, D.J. ; Coulbeck, L. ; Newcombe, D.R. ; Waind, P.R.
Author_Institution
Dynex Semicond., Lincoln, UK
fYear
2009
fDate
17-20 May 2009
Firstpage
274
Lastpage
280
Abstract
The blocking voltage rating of an IGBT module have reached up to 6.5 kV, however for true high power application such as traction drives, the current rating has to increase as well. This is mainly achieved by either improving the packing density of semiconductor chips per given module footprint and or improving the current density of the semiconductor chips used in the IGBT module. In this paper we explore how the current ratings of an 800 A, 3.3 kV module with 140times130 mm footprint can be improved for a fixed base-line reliability.
Keywords
insulated gate bipolar transistors; semiconductor device packaging; semiconductor device reliability; blocking voltage rating; current 800 A; fixed base-line reliability; high-power density IGBT module; high-reliability application; insulated gate bipolar transistor; packing density; semiconductor chip; voltage 3.3 kV; Bonding; Current density; Failure analysis; Insulated gate bipolar transistors; Life estimation; Maintenance; Modular construction; Soldering; Temperature; Voltage; Fast recovery diode; IGBT; life estimation; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference, 2009. IPEMC '09. IEEE 6th International
Conference_Location
Wuhan
Print_ISBN
978-1-4244-3556-2
Electronic_ISBN
978-1-4244-3557-9
Type
conf
DOI
10.1109/IPEMC.2009.5157398
Filename
5157398
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