• DocumentCode
    2418877
  • Title

    High power density IGBT module for high reliability applications

  • Author

    Chamund, D.J. ; Coulbeck, L. ; Newcombe, D.R. ; Waind, P.R.

  • Author_Institution
    Dynex Semicond., Lincoln, UK
  • fYear
    2009
  • fDate
    17-20 May 2009
  • Firstpage
    274
  • Lastpage
    280
  • Abstract
    The blocking voltage rating of an IGBT module have reached up to 6.5 kV, however for true high power application such as traction drives, the current rating has to increase as well. This is mainly achieved by either improving the packing density of semiconductor chips per given module footprint and or improving the current density of the semiconductor chips used in the IGBT module. In this paper we explore how the current ratings of an 800 A, 3.3 kV module with 140times130 mm footprint can be improved for a fixed base-line reliability.
  • Keywords
    insulated gate bipolar transistors; semiconductor device packaging; semiconductor device reliability; blocking voltage rating; current 800 A; fixed base-line reliability; high-power density IGBT module; high-reliability application; insulated gate bipolar transistor; packing density; semiconductor chip; voltage 3.3 kV; Bonding; Current density; Failure analysis; Insulated gate bipolar transistors; Life estimation; Maintenance; Modular construction; Soldering; Temperature; Voltage; Fast recovery diode; IGBT; life estimation; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Motion Control Conference, 2009. IPEMC '09. IEEE 6th International
  • Conference_Location
    Wuhan
  • Print_ISBN
    978-1-4244-3556-2
  • Electronic_ISBN
    978-1-4244-3557-9
  • Type

    conf

  • DOI
    10.1109/IPEMC.2009.5157398
  • Filename
    5157398