A first-principle analysis of resistive switching enhancement of HfO2 thin film induced by zinc doping method

Author

Mingyi Rao ; Lin Chen ; Qing-Qing Sun ; Peng Zhou ; Zhang, David Wei

Author_Institution

Sch. of Microelectron., Fudan Univ., Shanghai, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Significant performance enhancement of HfO₂ based resistive switching random access memory (RRAM) devices were achieved by Zn doping method. The non-volatile memory properties including operation voltage and uniformity were fully characterized. What´s more, from first-principle analysis results, The Zn-3d states are shifted upward when the oxygen vacancy locates at the nearest neighboring site of Zn atom. Dopant-assisted formation and migration of oxygen vacancies would induce the suppression of randomicity of conductive filaments´ behavior, which is possible lead to such RRAM characteristics improvement.

Keywords

ab initio calculations; density functional theory; hafnium compounds; resistive RAM; semiconductor doping; semiconductor thin films; zinc; HfO₂; HfO₂ based resistive switching random access memory; HfO₂ thin film; HfO₂:Zn; RRAM characteristics; RRAM devices; Zn 3d states; Zn atom; conductive filaments behavior randomicity; dopant-assisted formation; first principle analysis; nonvolatile memory properties; operation voltage; oxygen vacancy migration; resistive switching enhancement; uniformity; zinc doping method; Abstracts; Atomic measurements; Discrete Fourier transforms; Films; Hafnium compounds; Switches; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021374

Filename

7021374