Title :
A first-principle analysis of resistive switching enhancement of HfO2 thin film induced by zinc doping method
Author :
Mingyi Rao ; Lin Chen ; Qing-Qing Sun ; Peng Zhou ; Zhang, David Wei
Author_Institution :
Sch. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
Significant performance enhancement of HfO2 based resistive switching random access memory (RRAM) devices were achieved by Zn doping method. The non-volatile memory properties including operation voltage and uniformity were fully characterized. What´s more, from first-principle analysis results, The Zn-3d states are shifted upward when the oxygen vacancy locates at the nearest neighboring site of Zn atom. Dopant-assisted formation and migration of oxygen vacancies would induce the suppression of randomicity of conductive filaments´ behavior, which is possible lead to such RRAM characteristics improvement.
Keywords :
ab initio calculations; density functional theory; hafnium compounds; resistive RAM; semiconductor doping; semiconductor thin films; zinc; HfO2; HfO2 based resistive switching random access memory; HfO2 thin film; HfO2:Zn; RRAM characteristics; RRAM devices; Zn 3d states; Zn atom; conductive filaments behavior randomicity; dopant-assisted formation; first principle analysis; nonvolatile memory properties; operation voltage; oxygen vacancy migration; resistive switching enhancement; uniformity; zinc doping method; Abstracts; Atomic measurements; Discrete Fourier transforms; Films; Hafnium compounds; Switches; Zinc;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021374
