DocumentCode :
2419054
Title :
Effect of Amorphous Si Thickness on the Formation of SiC Nanoparticles during High Vacuum Annealing
Author :
Chung, C.K. ; Wu, B.H. ; Chen, T.S. ; Peng, C.C. ; Shih, T.R.
Author_Institution :
Dept. of Mech. Eng., National Cheng Kung Univ., Tainan
fYear :
2007
fDate :
16-19 Jan. 2007
Firstpage :
426
Lastpage :
429
Abstract :
In this paper, a novel approach for the formation of SiC nanoparticles (np-SiC) has been demonstrated by annealing the three-layer a-Si/C/a-Si film on a Si(100) substrate. The np-SiC formation strongly depends on the amorphous Si (a-Si) thickness and annealing temperature. Both three-layer a-Si/C/a-Si structures in different thickness i.e. 50/200/50 nm and 75/150/75 nm were studied at annealing temperatures of high vacuum annealing at 500-900 degC at 10-4 Pa. The a-Si thickness and annealing temperature significantly affected the particle size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500 degC, while a few particles started to appear as the annealing temperature was increased to 700 degC at both structures. Many np-SiC appeared at 900 degC at a density order about 108 cm-2 for both structure, but the thicker a-Si structure i.e. a-Si/C/a-Si (75/150/75 nm) has a particle density approximately 1.8 times higher than a-Si/C/a-Si (50/200/50 nm). This is attributed to the variation of activation energy, surface energy and atomic mobility during reaction of Si and C at different a-Si thickness and temperature. The higher the annealing temperature, the higher the particle density. The thicker a-Si structure with higher density implies that it has lower activation energy of SiC formation than the thin a-Si structure.
Keywords :
amorphous semiconductors; annealing; nanoparticles; silicon compounds; 500 to 900 C; SiC; activation energy; amorphous Si thickness; atomic mobility; high vacuum annealing; nanoparticles; particle density; surface energy; three-layer film; Amorphous materials; Annealing; Ion beams; Nanoparticles; Nonhomogeneous media; Plasma temperature; Silicon carbide; Sputtering; Substrates; Vacuum systems; SiC; amorphous; multilayer; nanoparticles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
1-4244-0610-2
Type :
conf
DOI :
10.1109/NEMS.2007.352051
Filename :
4160354
Link To Document :
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