DC and Analog/RF investigation on Germanium mosfet with double-Schottky-barrier source/drain

We design the novel dual barrier structure for Germanium MOSFET applications. The source/drain region is proposed to be composited with dual stacked germanide layers, and different barrier heights are hence formed. DC and Analog/RF analysis are carried out with simulations. The results have shown the tradeoff between Ion and Ioff can be feasibly achieved. Furthermore, the devices´ performance is nearly insensitive to germanium thickness, which can bring benefit to relax the requirement for the ultra-thin body thickness. With gate length scaled down, the intrinsic gain degrades, but cutoff frequency and intrinsic delay benefit from smaller capacitances.