Title :
Observation of frozen electronic sataes at epitaxial La2O3/GaAs heterostructure
Author :
Liang Song ; Lin Dong ; Peide Ye ; Yanqing Wu
Author_Institution :
Wuhan High Magn. Field Center, Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
III-V based MOSFET for future electronics have received much attention for their potential in future high speed electronics. The mechanisms of charge trapping and detrapping in III-V MOSFET are still yet to understand. Here we investigate an epitaxial La2O3/GaAs heterostructure by pulsed method at cryogenic temperatures, with a focus on the time dependent and temperature dependent charge trapping behavior. In particular, we directly observed the trap freezing at lower temperatures.
Keywords :
III-V semiconductors; MOSFET; electron traps; electronic structure; epitaxial layers; gallium arsenide; hole traps; lanthanum compounds; III-V based MOSFET; La2O3-GaAs; charge detrapping; charge trapping; cryogenic temperatures; epitaxial heterostructure; frozen electronic states; high speed electronics; pulsed method; Abstracts; Atmospheric measurements; Gallium arsenide; MOSFET; Particle measurements; Pulse measurements;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021387
