Observation of frozen electronic sataes at epitaxial La2O3/GaAs heterostructure

Author

Liang Song ; Lin Dong ; Peide Ye ; Yanqing Wu

Author_Institution

Wuhan High Magn. Field Center, Huazhong Univ. of Sci. & Technol., Wuhan, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

III-V based MOSFET for future electronics have received much attention for their potential in future high speed electronics. The mechanisms of charge trapping and detrapping in III-V MOSFET are still yet to understand. Here we investigate an epitaxial La₂O₃/GaAs heterostructure by pulsed method at cryogenic temperatures, with a focus on the time dependent and temperature dependent charge trapping behavior. In particular, we directly observed the trap freezing at lower temperatures.

Keywords

III-V semiconductors; MOSFET; electron traps; electronic structure; epitaxial layers; gallium arsenide; hole traps; lanthanum compounds; III-V based MOSFET; La₂O₃-GaAs; charge detrapping; charge trapping; cryogenic temperatures; epitaxial heterostructure; frozen electronic states; high speed electronics; pulsed method; Abstracts; Atmospheric measurements; Gallium arsenide; MOSFET; Particle measurements; Pulse measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021387

Filename

7021387