Title :
Investigation of spin-on-dopant for fabricating high on-current tunneling field effect transistor
Author :
Wei-Chao Zhou ; Xi Lin ; Xiao-Yong Liu ; Xiang-Ming Xu ; Chun-Min Zhang ; Jin-Shan Shi ; Peng-Fei Wang ; Zhang, David Wei
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
Spin-on-dopant and rapid thermal diffusion are used as the doping method for fabricating planar tunneling field effect transistor (TFET) in this paper to acquire abrupt doping profile and high surface doping concentration. Due to the heavy surface doping the on-current of TFET is enhanced. The ambipolar characteristics of TFET are also inhibited by reducing the drain doping concentration.
Keywords :
field effect transistors; semiconductor doping; thermal diffusion; tunnelling; TFET; ambipolar characteristics; drain doping concentration; high on-current tunneling field effect transistor fabrication; rapid thermal diffusion; spin-on-dopant investigation; surface doping concentration; Boron; Doping; Films; MOS devices; Phosphors; Silicon; Surface treatment;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021392
