A novel Bulk-FinFET with dual-material gate

Author

Yang Hong ; YuFeng Guo ; Hui Yang ; Jiafei Yao ; Jun Zhang ; Xincun Ji

Author_Institution

Nanjing Univ. of Posts & Telecommun., Nanjing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

A bulk-FinFET with dual material gate called DMG-Bulk-FinFET is proposed in this paper. Its characteristics are compared to the normal bulk-FinFET using 3-D simulations. It is demonstrated that the new structure has the features in suppressing the short channel effects, improving transconductance and enhancing the carrier transport efficiency. Moreover, these features can be optimized by engineering the gate length ratio and workfunction difference. This work illustrates the better performance of the DMG-Bulk-FinFET than its counterpart with single material gate and presents an optimization design of the DMG structure.

Keywords

high electron mobility transistors; 3D simulations; DMG structure; DMG-bulk-FinFET; carrier transport efficiency; dual material gate; gate length ratio; normal bulk-FinFET; optimization design; short channel effects; single material gate; transconductance improvement; workfunction difference; Abstracts; CMOS integrated circuits; Frequency modulation; Logic gates; Medical services; Performance evaluation; Process control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021393

Filename

7021393