DocumentCode :
2419706
Title :
Model for high field conduction in doped polymers
Author :
Qi, Xiaoguang ; Boggs, Steven
Author_Institution :
Electr. Insulation Res. Center, Connecticut Univ., Storrs, CT, USA
fYear :
2002
fDate :
7-10 Apr 2002
Firstpage :
313
Lastpage :
316
Abstract :
M.M. Perlmann (1989) has published models for conduction with "traps" (potential wells in the range of 0.8 eV) and with a combination of "traps" and "hopping sites" (potential wells in the range of 0.3 eV). However, the model for the latter does not extrapolate into the former as the number of hopping sites goes to zero. As a result, the conductivity cannot be computed for arbitrary densities of traps and hopping sites. A model has been developed based on quantum tunneling between the nearest neighbor and next nearest neighbor "traps" and "hopping sites" to calculate the hopping-induced conductivity, especially at high electric fields. The results are compared with Perlman\´s data.
Keywords :
conducting polymers; electron traps; high field effects; hole traps; hopping conduction; conduction models; conductivity; doped polymers; high electric fields; high field conduction; hopping sites; hopping-induced conductivity; nearest neighbor hopping sites; nearest neighbor traps; next nearest neighbor hopping sites; next nearest neighbor traps; potential wells; quantum tunneling; traps; Conductivity; Current density; Dielectrics and electrical insulation; Electron traps; Gold; Nearest neighbor searches; Poisson equations; Polymers; Potential well; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation, 2002. Conference Record of the 2002 IEEE International Symposium on
Print_ISBN :
0-7803-7337-5
Type :
conf
DOI :
10.1109/ELINSL.2002.995939
Filename :
995939
Link To Document :
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