Direct extraction of GaAs MESFET intrinsic element and parasitic inductance values

A simple method is described for extracting the intrinsic element and parasitic inductance values for the GaAs MESFET equivalent circuit. The intrinsic element values are extracted from low-frequency y-parameter data deembedded through previously determined parasitic resistances. Parasitic inductance values are then evaluated by comparing the resulting modeled z-parameters with the extrinsic measured z-parameters. All elements are extracted from the same set of hot FET S-parameter measurements. The method is very fast, and the resulting equivalent circuit provides an excellent match to measured S-parameters through 18 GHz.<>