DocumentCode
2419899
Title
PD-SOI and FD-SOI: a comparison of circuit performance
Author
Marshall, Andrew ; Natarajan, Sreedhar
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
Volume
1
fYear
2002
fDate
2002
Firstpage
25
Abstract
Over the past few years SOI has received much attention as an integrated circuit substrate that may confer advantages in performance over conventional bulk silicon IC processing. Partially and Fully Depleted SOI have been evaluated as possible successors to bulk silicon substrates for high performance circuits. Device characteristics and circuit design on these two forms of SOI are compared and contrasted.
Keywords
MOS analogue integrated circuits; integrated circuit design; low-power electronics; silicon-on-insulator; FD-SOI; MOS device; PD-SOI; Si; analogue integrated circuit substrate; circuit design; circuit performance; fully depleted SOI; high performance circuits; low-power applications; partially depleted SOI; Body regions; Circuits; Displays; History; Impact ionization; Instruments; Manufacturing; Silicon; Substrates; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2002. 9th International Conference on
Print_ISBN
0-7803-7596-3
Type
conf
DOI
10.1109/ICECS.2002.1045324
Filename
1045324
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