DocumentCode
241996
Title
The HiSIM compact models of high-voltage/power semiconductor devices for circuit simulation
Author
Mattausch, Hans Jurgen ; Umeda, Tomohiro ; Kikuchihara, Hideyuki ; Miura-Mattausch, M.
Author_Institution
HiSIM Res. Center, Hiroshima Univ., Higashi-Hiroshima, Japan
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
4
Abstract
We review the high-voltage/power device models of the HiSIM family of compact models for circuit simulation. The HiSIM-HV model for integrated lateral high-voltage MOSFETs as e. g. the lateral double-diffused MOS (LDMOS) and its extensions to vertical power-device structures like UMOS or SJ-MOS are given a special focus. Additionally extensions to reverse/forward recovery effects and advanced materials like SiC are presented.
Keywords
MOSFET; circuit simulation; power semiconductor devices; semiconductor device models; silicon compounds; wide band gap semiconductors; HiSIM compact models; HiSIM-HV model; LDMOS; SJ-MOS; SiC; UMOS; circuit simulation; lateral double-diffused MOS; lateral high-voltage MOSFET; power semiconductor devices; Abstracts; Capacitance; Industries; MOSFET; Semiconductor device modeling; Silicon; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021424
Filename
7021424
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