DocumentCode :
242001
Title :
Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS
Author :
Guang-Xi Hu ; Shu-Yan Hu ; Pei-Cheng Li ; Ran Liu ; Ling-Li Wang ; Xing Zhou
Author_Institution :
Sch. of Inf. Sci. & Technol., Fudan Univ., Shanghai, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
The threshold voltage, Vth, of a surrounding-gate (SG) Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. An analytical expression for surface potential is obtained by solving Poisson´s equation. Based on the potential model, an analytical expression for Vth is achieved, with quantum mechanical effects and SB lowering effect included. It is found that Vth will be raised by quantum mechanical effects and lowered by SB lowering effect. It is also found that, the influence of channel length on Vth is complicated; when the channel length is 20 nm, Vth is the smallest.
Keywords :
MOSFET; Poisson equation; Schottky barriers; quantum theory; semiconductor device models; surface potential; Poisson equation; Schottky barrier surrounding gate MOSFET; analytic model; metal oxide semiconductor field effect transistor; potential model; quantum mechanical effects; subthreshold channel potential; subthreshold lowering effect; surface potential; surrounding gate Schottky barrier; threshold voltage; Analytical models; Electric potential; Logic gates; MOSFET; Quantum mechanics; Semiconductor device modeling; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021427
Filename :
7021427
Link To Document :
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