An extra low noise 1.8 GHz voltage controlled oscillator in 0.35 SiGe BiCMOS technology

Author

Dermentzoglou, Lampros ; Kamoulakos, George ; Arapoyanni, Aggeliki

Author_Institution

I.S.D. S.A, Athens, Greece

Volume

1

fYear

2002

fDate

2002

Firstpage

89

Abstract

A fully integrated 1.8 GHz low-phase-noise LC-tank voltage controlled oscillator (VCO) has been designed in SiGe BiCMOS technology. The noise performance is partially due to the high Q SiGe thick Metal5 octagonal inductors and n⁺/n-well on p-substrate varactors used in the LC tank and also due to the large MOSFETs used in the cross-coupled pair in order to compensate the inductor losses. The phase noise achieved is -120.7 dBc/Hz at an offset frequency of 200 kHz, considering a current consumption of 15 mA, with 3.3 V power supply. The tunability of the structure covers 216 MHz, from 1.612 GHz up to 1.828 GHz.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF oscillators; circuit tuning; integrated circuit design; integrated circuit noise; phase noise; semiconductor materials; varactors; voltage-controlled oscillators; 1.612 to 1.828 GHz; 1.8 GHz; 15 mA; 3.3 V; LC-tank VCO; SiGe; SiGe BiCMOS technology; cross-coupled pair; fully integrated VCO; high Q SiGe thick Metal5 octagonal inductors; inductor losses compensation; large MOSFETs; low-phase-noise VCO; n⁺/n-well on p-substrate varactors; noise performance; voltage controlled oscillator; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Inductors; MOSFETs; Performance loss; Phase noise; Silicon germanium; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2002. 9th International Conference on

Print_ISBN

0-7803-7596-3

Type

conf

DOI

10.1109/ICECS.2002.1045340

Filename

1045340