3-D Geant4 simulation of deep sub-micron SOI SRAM irradiated by proton

Author

Shuo Guo ; Jinshun Bi ; Jiajun Luo ; Zhengsheng Han

Author_Institution

Inst. of Microelectron., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Extra charge will be generated and deposited into the cell when an energetic ion strikes the SOI SRAM. The sensitive regions will collect the deposited charge. This may upset the logic values stored in SRAM. The Geant4 is a very useful tool to simulate the process above. The GDML (Geometry Description Markup Language) file can be used to model the geometry of device or circuit in Geant4. In the paper, we used the GDML file to construct the 3-D geometry model of SOI SRAM for the simulation of heavy ion irradiation. And the Single Event Upset (SEU) Cross-Section is used to estimate the hardening levels of SRAM.

Keywords

SRAM chips; logic design; protons; silicon-on-insulator; 3-D Geant4 simulation; SEU; SOI; SRAM; energetic ion; geometry description markup language; ion irradiation; proton; single event upset cross-section; Dielectrics; Integrated circuit modeling; Random access memory; Silicon; Silicon compounds; Solid modeling; Tungsten; 3-D model; Cross-Section; Geant4; Monte Carlo; SRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021438

Filename

7021438