The influence of proton irradiation on the interface states in InP/InGaAs heterojunction structure

Author

Li Chenghuan ; Lu Hongliang ; Zhang Yuming ; Zhang Yimen ; Liu Min

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´an, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

The effects of 3 MeV and 10 MeV proton irradiation on the performance of InP/InGaAs heterojunction structure are reported. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics before and after proton irradiation are compared. The interface states density is calculated on the basis of the frequency dependent capacitance-voltage (C-V) measurements. The results show that the interface states increase with the increase in fluence after 3 MeV proton irradiation. Also, more interface states are induced by the irradiation with lower energy proton.

Keywords

III-V semiconductors; capacitance; electrical conductivity; gallium arsenide; indium compounds; interface states; proton effects; semiconductor heterojunctions; C-V characteristics; I-V characteristics; InP-InGaAs; current-voltage characteristics; electron volt energy 10 MeV; electron volt energy 3 MeV; frequency dependent capacitance-voltage measurements; heterojunction structure; interface state density; proton irradiation effects; Educational institutions; Frequency measurement; Indium gallium arsenide; Indium phosphide; Radiation effects; Temperature measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021439

Filename

7021439