Title :
An simple approach to evaluate TID response in High Voltage MOSFET for 65nm flash technology
Author :
Dandan Jiang ; Zongliang Huo ; Lei Jin ; Xiaonan Yang ; Yan Wang ; Xinkai Li ; Zhihong Yao ; ZhaoAn Yu ; Ming Liu
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
Two straightforward parameter extraction methods are proposed to characterize the main and parasitic transistor´s Total Ionizing Dose (TID) effect of High Voltage nMOSFET (HV-MOS) for 65nm flash technology. During radiation, the Vth and drain current of the main and parasitic transistor were extracted separately. Clear understanding of the impact of each transistor´s radiation response is helpful to optimize the design of radiation-hard flash memory.
Keywords :
MOSFET; flash memories; HV-MOS; TID effect; TID response evaluation; high voltage MOSFET; high voltage nMOSFET; main transistor; parameter extraction methods; parasitic transistor; radiation response; radiation-hard flash memory design; size 65 nm; total ionizing dose effect; Abstracts; MOSFET; MOSFET circuits; Silicon; Voltage measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021441
