DocumentCode :
2420463
Title :
Energy Dissipation in Folded-Beam MEMS Resonators Made from Single Crystal and Polycrystalline 3C-SiC Films
Author :
Chang, Wen-Teng ; Mehregany, Mehran ; Zorman, Christian A.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung
fYear :
2007
fDate :
16-19 Jan. 2007
Firstpage :
740
Lastpage :
744
Abstract :
This paper examines energy dissipation in MEMS folded-beam resonators made from single crystal and polycrystalline 3C-SiC (poly-SiC) films. The single crystal films were grown at 1280degC by atmospheric pressure chemical vapor deposition (APCVD) while the polycrystalline films were deposited by low pressure chemical vapor deposition (LPCVD) at 900degC. Testing was conducted a pressure of 30 muTorr using a transimpedance amplifier-based circuit. Results show that the quality factor is five times higher for the single crystal SiC devices than the poly-SiC devices. Analysis of the principal components governing energy dissipation indicates that the difference is due to film micro structure and the associated internal losses.
Keywords :
Q-factor; chemical vapour deposition; micromechanical devices; silicon compounds; wide band gap semiconductors; 0.00003 Torr; 1280 C; 900 C; SiC; atmospheric pressure chemical vapor deposition; energy dissipation; folded-beam MEMS resonators; low pressure chemical vapor deposition; polycrystalline films; quality factor; single crystal; transimpedance amplifier circuit; Dry etching; Energy dissipation; Energy loss; Hydrogen; Micromechanical devices; Power engineering and energy; Q factor; Semiconductor films; Silicon carbide; Sputter etching; 3C-SiC; Quality Factor; Resonator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
1-4244-0610-2
Type :
conf
DOI :
10.1109/NEMS.2007.352124
Filename :
4160427
Link To Document :
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