a-IGZO thin film transistors with channel layer deposited at room temperature and 250°C

Author

Wei Deng ; Xin He ; Xiang Xiao ; Ling Wang ; Weizhi Meng ; Shengdong Zhang

Author_Institution

Sch. of Electron. Eng. & Comput. Sci., Peking Univ., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

The a-IGZO thin film transistors with channel layer deposited at room temperature and 250°C are fabricated in this work. Results show the TFTs with IGZO film deposited at 250°C have lower threshold voltage, higher carrier mobility, and better sub-threshold slope than that with IGZO film deposited at room temperature. X-ray photoelectron spectroscopy measurement shows the proportion of Indium atoms in the IGZO film deposited at 250°C is higher than at room temperature.

Keywords

X-ray photoelectron spectra; carrier mobility; gallium compounds; indium compounds; thin film transistors; zinc compounds; InGaZnO; TFT; X-ray photoelectron spectroscopy measurement; XPS; carrier mobility; channel layer; subthreshold slope; temperature 250 degC; temperature 293 K to 298 K; thin film transistors; threshold voltage; Films; Logic gates; Plasma temperature; Substrates; Temperature; Temperature measurement; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021453

Filename

7021453