Effects of radio frequency power on properties of titanium-doped zinc oxide based TFTs

Author

Nannan Zhao ; Dedong Han ; Zhuofa Chen ; Jing Wu ; Yingying Cong ; Junchen Dong ; Feilong Zhao ; Shengdong Zhang ; Xing Zhang ; Yi Wang

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

In this paper, titanium-doped zinc oxide (TZO) films were prepared by radio frequency (RF) sputtering at different RF powers acting as the channel layers of thin film transistors (TFTs). Through the analysis of scanning electron microscope (SEM), X-Ray diffraction (XRD) and transfer characteristics, we studied the effects of RF power on properties of TZO films and TZO-based TFTs and obtained optimum device characteristics at the RF power of 100W. The TZO-based TFT fabricated at the optimum RF power exhibits a high saturation mobility (μ_sat) of 213 cm²V^-1S^-1, a low subthreshold swing (SS) of 143 mV/decade and a high I_on/I_off ratio of 7.4×10⁸.

Keywords

II-VI semiconductors; X-ray diffraction; scanning electron microscopy; semiconductor device manufacture; semiconductor device testing; semiconductor doping; sputter deposition; thin film transistors; titanium; wide band gap semiconductors; zinc; RF sputtering; SEM; TZO films; TZO-based TFT; X-ray diffraction; XRD; power 100 W; radio frequency power; radio frequency sputtering; saturation mobility; scanning electron microscope; subthreshold swing; thin film transistors; titanium-doped zinc oxide; Abstracts; Capacitance-voltage characteristics; Electronic mail; Indium tin oxide; Magnetic films; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021455

Filename

7021455