Title :
Effects of radio frequency power on properties of titanium-doped zinc oxide based TFTs
Author :
Nannan Zhao ; Dedong Han ; Zhuofa Chen ; Jing Wu ; Yingying Cong ; Junchen Dong ; Feilong Zhao ; Shengdong Zhang ; Xing Zhang ; Yi Wang
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Abstract :
In this paper, titanium-doped zinc oxide (TZO) films were prepared by radio frequency (RF) sputtering at different RF powers acting as the channel layers of thin film transistors (TFTs). Through the analysis of scanning electron microscope (SEM), X-Ray diffraction (XRD) and transfer characteristics, we studied the effects of RF power on properties of TZO films and TZO-based TFTs and obtained optimum device characteristics at the RF power of 100W. The TZO-based TFT fabricated at the optimum RF power exhibits a high saturation mobility (μsat) of 213 cm2V-1S-1, a low subthreshold swing (SS) of 143 mV/decade and a high Ion/Ioff ratio of 7.4×108.
Keywords :
II-VI semiconductors; X-ray diffraction; scanning electron microscopy; semiconductor device manufacture; semiconductor device testing; semiconductor doping; sputter deposition; thin film transistors; titanium; wide band gap semiconductors; zinc; RF sputtering; SEM; TZO films; TZO-based TFT; X-ray diffraction; XRD; power 100 W; radio frequency power; radio frequency sputtering; saturation mobility; scanning electron microscope; subthreshold swing; thin film transistors; titanium-doped zinc oxide; Abstracts; Capacitance-voltage characteristics; Electronic mail; Indium tin oxide; Magnetic films; Radio frequency;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021455
