A 12 GHz-band super low-noise amplifier using a self-aligned gate MESFET

Author

Ayaki, N. ; Shimura, T. ; Hosogi, K. ; Kato, T. ; Nakajima, Y. ; Sakai, M. ; Kohno, Y. ; Nakano, H. ; Tanino, N.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1989

fDate

12-13 June 1989

Firstpage

7

Lastpage

10

Abstract

The design and fabrication of a 12-GHz-band, 4-stage, monolithic super-low-noise amplifier using self-aligned multilayer gate FETs is described. The device uses a self-aligned multilayer gate FET (SAMFET) with a LDD structure and a buried p-layer. The 0.3- mu m-gate FET used in the amplifier produces a typical noise figure of 1.07 dB with an associated gain of 9.0 dB at 12 GHz. The amplifier gives a minimum noise figure of 1.58 dB with a gain of 29 dB at 12 GHz: the noise figure is less than 1.76 dB with an associated gain as high as 28 dB in the frequency range from 11.7 to 12.7 GHz.<>

Keywords

MMIC; Schottky gate field effect transistors; field effect integrated circuits; microwave amplifiers; 1.07 to 1.76 dB; 11.7 to 12.7 GHz; 4-stage; 9 to 29 dB; LDD; SAMFET; SHF; buried p-layer; design; fabrication; frequency range; gain; noise figure; self-aligned gate MESFET; self-aligned multilayer gate FETs; super low-noise amplifier; Electrodes; FETs; Frequency; Gold; Low-noise amplifiers; MESFETs; MMICs; Noise figure; Satellite broadcasting; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MCS.1989.37250

Filename

37250