A family of 2-20 GHz broadband low noise AlGaAs HEMT MMIC amplifiers

Author

Dixit, R. ; Nelson, B. ; Jones, W. ; Carillo, J.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1989

fDate

12-13 June 1989

Firstpage

15

Lastpage

19

Abstract

The authors describe the technology development leading to a family of high-electron-mobility transistor (HEMT) monolithic low-noise amplifiers (LNAs), and present modeled and measured performance data on LNAs covering the 2-20 GHz frequency band. These amplifiers achieve noise figures comparable to their counterpart in hybrid HEMT technology. The amplifiers are configured in a cascadable design, with simultaneous low input and output VSWR, and flat gain response. Performance results include measured and modeled data for a 2-7 GHz LNA with 2.5-dB noise figure, a 2-20-GHz distributed amplifier with 9.5-dB flat gain and 3.5-dB noise figure, and a 5-11-GHz and >3.5 balanced LNA with 10-dB gain and <2.5-dB noise figure (6-11 GHz). A preliminary temperature step-stress reliability evaluation on the discrete-process HEMT device is also presented.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; microwave amplifiers; wideband amplifiers; 10 dB; 2 to 20 GHz; 2.5 to 3.5 dB; AlGaAs; HEMT MMIC amplifiers; LNAs; SHF; balanced LNA; cascadable design; distributed amplifier; flat gain response; high-electron-mobility transistor; low input; monolithic low-noise amplifiers; noise figures; performance data; semiconductors; technology development; temperature step-stress reliability evaluation; Broadband amplifiers; Frequency measurement; Gain measurement; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Noise figure; Noise measurement; Performance gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MCS.1989.37253

Filename

37253