Title :
Ka-band monolithic GaAs two-stage power amplifier
Author :
Oda, Yuji ; Yoshida, Tomohiro ; Kai, Kenichirou ; Arai, Shigemitsu ; Yanagawa, Shigeru
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The development of a Ka-band monolithic GaAs two-stage power amplifier with 3.6-mm total gate width is presented. The monolithic amplifier uses FETs with 1.2-mm and 2.4-mm gate widths for the first-stage and second-stage devices, respectively. It delivers an output power of 0.56 W, with a power gain of 7.2 dB, and a power-added efficiency of 15% at 28 GHz. Output power of more than 0.5 W is obtained over 27.5-28.5 GHz, with power gain exceeding 5 dB. The authors expect that further improvements in output power will be achieved through drain current optimization and a monolithic parallel combining of amplifiers.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; power integrated circuits; 0.56 W; 15 percent; 28.5 GHz; 3.6 mm; 7.2 dB; GaAs; Ka-band; SHF; drain current optimization; gain; gate width; monolithic amplifier; monolithic parallel combining of amplifiers; output power; power-added efficiency; semiconductors; two-stage power amplifier; Aggregates; Circuits; Fingers; Gallium arsenide; Impedance; Microwave FETs; Microwave amplifiers; Performance gain; Power amplifiers; Power generation;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MCS.1989.37257
