Title :
High power control components using a new monolithic FET structure
Author :
Shifrin, M. ; Katzin, P. ; Ayasli, Y.
Author_Institution :
Hittite Microwave Corp., Woburn, MA, USA
Abstract :
A monolithic-switch FET (MFET) control device that can be integrated with other monolithic functions or used as a discrete component in a monolithic microwave integrated circuit (MMIC) structure is presented. The MFET device is a suitable replacement for p-i-n diodes as a generic control element in applications from 10 W to several hundred W CW, and has the advantages of a conventional GaAs switch FET (SFET). The increased power handling is due to the device´s ability to overcome the breakdown voltage limitation of conventional SFETs. The design, fabrication, and performance of two high-power control components using MFET devices are described as examples of the implementation of this technology: an L-band terminated single-pole single-throw (SPST) switch, and an L-band limiter.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; field effect transistors; gallium arsenide; semiconductor switches; solid-state microwave devices; GaAs; L-band; MFET device; MMIC; SPST switch; UHF; design; fabrication; generic control element; high-power control components; limiter; monolithic FET structure; monolithic-switch FET; performance; power handling; replacement for p-i-n diodes; semiconductors; switch FET; FET integrated circuits; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; P-i-n diodes; Power control; Switches;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MCS.1989.37261
