DocumentCode
242089
Title
Novel RF CMOS symmetric inductor with stacked multi layer/finger structure
Author
Jen-Hao Cheng ; Waisum Wong ; Xi-Ning Wang ; Zhenghao Gan ; Yun Yue ; Ling Liu ; Lin Zhong
Author_Institution
Technol. R&D Center, Semicond. Manuf. Int. Corp., Shanghai, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
A symmetrical inductor structure has been developed and optimized using multi-layer and multi-finger stacked configuration. The new design improves the Q factor by 8% and reduces the die area by 30% for the same inductance compared to the typical planar differential inductor. Excellent symmetric performance of Q11/Q22 and L11/L22 has also been demonstrated while the series resistance and substrate parasitic capacitance has been greatly reduced.
Keywords
CMOS integrated circuits; inductors; integrated circuit design; radiofrequency integrated circuits; Q factor; RF CMOS symmetric inductor structure; multi-fmger stacked configuration; multi-layer stacked configuration; planar differential inductor; series resistance; substrate parasitic capacitance; Abstracts; Coils; Fingers; Inductors; Integrated circuits; Read only memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021471
Filename
7021471
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